Device Characterization
Developing and using MOSFETS, IGBTs, diodes and other high power devices requires comprehensive device-level characterization such as breakdown voltage, on-state current and capacitance measurements. Our line of Curve Tracer configurations supports the full spectrum of device types and test parameters.
Accelerate research, reliability and failure analysis studies of semiconductor devices, materials and process development. It delivers synchronizing current-voltage (I-V), capacitance-voltage (C-V) and ultra-fast pulsed I-V measurements.
Features
- Complete solutions engineered for optimum price and performance
- Field upgradable and reconfigurable -- convert your PCT to a reliability or wafer sort tester
- Configurable power levels
- Full range of capacitance-voltage (C-V) capability
- Supports 2-, 3-, and 4-terminal devices
- Up to 3kV DC bias
- High performance test fixture supports a range of package types
- Probe station interface supports most probe types including HV triax, SHV coax, standard triax, and others
