• Dutco Tennant LLC, PO Box 233, Dubai, U.A.E.

Field emission scanning electron microscopy (FESEM) provides topographical and elemental information at magnifications of 10x to 300,000x, with virtually unlimited depth of field. Compared with convention scanning electron microscopy (SEM), field emission SEM (FESEM) produces clearer, less electrostatically distorted images with spatial resolution down to 1 1/2 nanometers – three to six times better.

Applications of FESEM include:

  • Semiconductor device cross section analyses for gate widths, gate oxides, film thicknesses, and construction details
  • Advanced coating thickness and structure uniformity determination
  • Small contamination feature geometry and elemental composition measurement